MICROELECTRONICS MATERIALS AND DEVICES
2018/2019, Semester 1
Engineering (Electrical & Computer Engineering)
Modular Credits: 4
Electronic devices are the basic building blocks of all electronic gadgets used in our daily life. A solid understanding of the fundamental device concepts is essential for electrical engineer to keep up with the fast evolution of new device technology. This module emphasizes on the properties of electronic materials and the operation principles of key electronic devices including p-n diode, bipolar junction transistor (BJT), MOS capacitor (MOSCAP) and MOS field-effect transistor (MOSFET). Additional issues related to dielectric materials and contacts between metal and semiconductor will also be covered.
Devices and Circuits
OR EE2027 Electronic Circuits
Microelectronics in everyday life and different industries; Common materials and devices in microelectronics; Illustration of microelectronics using a common example; metals, semiconductors and insulators.
2. Crystal structure
Lattice, basis, unit cell, crystal planes, basic crystal structures (Cubic, bcc, fcc, diamond, zinc blende), periodicity in crystal structure (briefly Bragg Law, diffraction methods and structure factor).
3. Dielectrics and other non-semiconductor materials in microelectronics
Polarisation, mechanisms of polarisation, frequency response, loss and relaxation, losses; dielectric breakdown; ferroelectrics; ferromagnets.
Density of states function, Fermi-Dirac statistics; equilibrium carrier concentrations, intrinsic carrier concentration, concepts of electrons and holes, concepts of drift and diffusion, Fermi level position, dopant atoms and energy levels, doping of semiconductors, energy band diagram, continuity equation, non-equilibrium consideration, direct and indirect transitions, absorption and emission.
5. p-n junctions
Abrupt p-n Junction in thermal equilibrium, qualitative description of forward & reverse applied bias using band diagrams, application examples (p-n diode, BJT).
6. Metal semiconductor contacts
Thermionic emission, Schottky effect, field emission, Schottky contacts, Ohmic contacts, practical considerations of making contacts.
7. MOS capacitors
Ideal MOS capacitor, MOSCAP under D.C. bias, analysis of ideal MOS structure, deviations from ideality, capacitance-voltage characteristics.
8. MOS field-effect transistors
Principles of operation, enhancement & depletion-type FET, threshold voltage, MOSFET at non-equilibrium.
2 Laboratory experiments
EE3406, EE2004, PC3235
Workload Components : A-B-C-D-E
A: no. of lecture hours per week
B: no. of tutorial hours per week
C: no. of lab hours per week
D: no. of hours for projects, assignments, fieldwork etc per week
E: no. of hours for preparatory work by a student per week